BF1100WR-T datasheet

Маркировка

BF1100WR-T
Производитель

NXP Semiconductors
Описание

NXP Semiconductors BF1100WR-T Mfr Package Description: MICRO MINIATURE, PLASTIC PACKAGE-4 Package Shape: RECTANGULAR Package Style: SMALL OUTLINE Surface Mount: Yes Terminal Form: GULL WING Terminal Position: DUAL Number of Terminals: 4 Package Body Material: PLASTIC/EPOXY Configuration: COMPLEX Case Connection: SOURCE Number of Elements: 2 Transistor Application: AMPLIFIER Transistor Element Material: SILICON Power Dissipation Ambient-Max: 0.2800 W Channel Type: N-CHANNEL FET Technology: METAL-OXIDE SEMICONDUCTOR Operating Mode: DUAL GATE, ENHANCEMENT Transistor Type: RF SMALL SIGNAL Drain Current-Max (ID): 0.0300 A Highest Frequency Band: ULTRA HIGH FREQUENCY BAND Feedback Cap-Max (Crss): 0.0350 pF DS Breakdown Voltage-Min: 14 V
Количество страниц

16 шт.
Формат

PDF
(Для просмотра требуется Adobe Acrobat Reader)
Размер файла

151,54 KB